File:Bv rdson.png
Original file (1,500 × 1,050 pixels, file size: 82 KB, MIME type: image/png)
Captions
Summary
[edit]Cyril BUTTAY - plotted using gnuplot, source file available by email: cyril DOT buttay AT free DOT fr
This plot represents the specific resistance of MOSFETs versus their breakdown voltage. The dots are the values estimated from the datasheets of the following manufacturers: International Rectifier, ST Microelectronics, Infineon. Only the transistors in D2PAK package have been considered, with an estimated 30 mm² die size.
The "ideal" curve is the specific resistance of a single silicon layer that can withstand the given breakdown voltage. Its equation is Rdson=5.93.10-9.Vbr2.5, and comes from B. JAYANT BALIGA, "Power semiconductor devices", PWS publishing company, 1996
)"
set xlabel "Breakdown Voltage (V)" set format y '%3.1s %c'#{/Symbol W}' set format x "%3.0s %cV" set logscale xy
- output file name
set output "bv_rdson.eps" plot [10:2000][100e-6:10] 5.93e-9*(x**2.5) ls 3 title 'Ideal MOSFET',\ 'mos_data.txt' using 1:($2*0.3) ls 2 with points title 'Commercially available MOSFETs (estimated specific resistance)' }}
Dataset
[edit]gnuplot expects to find the data in a file named 'mos_data.txt'. As mentioned above, the data comes from various manufacturers, but I forgot to write down the corresponding devices reference numbers...
post processing
[edit]convert -density 300 bv_rdson.eps bv_rdson.png
Licensing
[edit]Permission is granted to copy, distribute and/or modify this document under the terms of the GNU Free Documentation License, Version 1.2 or any later version published by the Free Software Foundation; with no Invariant Sections, no Front-Cover Texts, and no Back-Cover Texts. A copy of the license is included in the section entitled GNU Free Documentation License.http://www.gnu.org/copyleft/fdl.htmlGFDLGNU Free Documentation Licensetruetrue |
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File history
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Date/Time | Thumbnail | Dimensions | User | Comment | |
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current | 08:24, 25 January 2012 | 1,500 × 1,050 (82 KB) | CyrilB~commonswiki (talk | contribs) | The "ideal" curve on previous figures was plotted using the following equation: 1.63e-8.Vbr^2.5. However, this equation is for P-devices (see B.J.Baliga "power semiconductor devices", PWS , ISBN 0-534-94098-6, 1995 p 373). For N devices, the constant is 5 | |
20:47, 3 March 2011 | 1,500 × 1,050 (88 KB) | CyrilB~commonswiki (talk | contribs) | Correction of the y-axis label from ohm.cm-2 to ohm.cm2 | ||
18:13, 11 February 2006 | 1,500 × 1,050 (37 KB) | CyrilB~commonswiki (talk | contribs) | Cyril BUTTAY - plotted using gnuplot, source file available by email: cyril DOT buttay AT free DOT fr This plot represents the specific resistance of MOSFETs versus their breakdown voltage. The dots are the values estimated from the datasheets of the fol |
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