File:Reflectance for narrowband EUV.png

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Captions

Captions

For different EUV wavelengths, the multilayer reflectance dependence on incident angle varies significantly.

Summary

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Description
English: Left: For shorter wavelengths, the multilayer reflectance increases for larger incident angles. Center: The reflectance appears fairly uniform across a range of angles for a narrow band of wavelengths. Right: For longer wavelengths, the reflectance peaks at smaller incident angles.[1] Insets show the resulting corresponding distributions of reflectance across the pupil, also known as mask-induced apodization,[2] for 13.4 nm (left), 13.5 nm (center), and 13.65 nm (right), respectively.
Date
Source Own work
Author Guiding light

Licensing

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References

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  1. ↑ R. Chao et al., Measurement and characterization of EUV mask performance at high-NA, EECS Department, Univ. of California, Berkeley Technical Report No. UCB/EECS-2013-56, 5/10/2013, Figure 5.
  2. ↑ N. Davydova et al., Proc. SPIE 8166, 816624 (2011).

File history

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Date/TimeThumbnailDimensionsUserComment
current19:53, 20 July 2019Thumbnail for version as of 19:53, 20 July 20191,276 × 252 (110 KB)Guiding light (talk | contribs)Insets for pupil gradients
02:35, 20 July 2019Thumbnail for version as of 02:35, 20 July 20191,276 × 254 (61 KB)Guiding light (talk | contribs)additional ranges
01:37, 20 July 2019Thumbnail for version as of 01:37, 20 July 2019521 × 312 (8 KB)Guiding light (talk | contribs)User created page with UploadWizard

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